suns-Voc測試儀

如何利用Suns-Voc進行漿料與燒結技術優化

少子壽命，PN結的好壞，表面及體內的復合情況,材料質量、鈍化效果等" b3 X_6 K$ b1 u" ~- I. E1 V; A
Life time,Pseudo-EFF, Pseudo-Voc, Pseudo-FF, Ideality factor

對比該曲線與zui后測定的I至V曲線，可以準確測量出電池的串聯電阻。

Suns-Voc系統特征

晶元測定的溫控為25°C

電壓探針的高jing準度

兼容磁性探針

配備全套濃度補正濾色片的疝氣燈

后支柱可調節高度，準確調節亮度

適用標準I至V曲線圖及Suns-Voc曲線圖

不受串聯電阻的影響，測定晶片特征

Suns-Voc Applications


By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present), the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage, so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel